unisonic technologies co., ltd utf3055 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-318.d n-channel enhancement mode power mosfet ? description as an n-channel enhancement mode power mosfet, the utc utf3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ? features * r ds(on) < 110 m ? @ v gs =10v ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing utf3055l-aa3-r utf3055g-aa3-r sot-223 g d s tape reel UTF3055L-TN3-R utf3055g-tn3-r to-252 g d s tape reel
utf3055 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-318.d ? absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol ratings unit drain source voltage v dss 60 v drain gate voltage (r gs = 10m ? ) v dgr 60 v continuous 20 v gate source voltage non-repetitive (t p 10 ms) v gss 30 v continuous drain current ( t a = 25c) i d 3.0 a pulsed drain current (t p 10 s) i dm 9.0 a single pulsed avalanche energy (note 2) e as 74 mj sot-223 0.83 power dissipation (t a = 25c) (note 3) to-252 1.136 w sot-223 14 derate above 25c to-252 p d 20 mw/c junction temperature t j 175 c strong temperature t stg -55 ~ +175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. t j = 25c ,v dd = 25v, v gs = 10v, i l = 7.0a, l = 3.0mh, v ds = 60v 3. when surface mounted to an fr4 board using 1 pad size, 1 oz.(cu. area 1.127 sq in ). ? thermal data parameter symbol ratings unit sot-223 150 junction to ambient (note) to-252 ja 110 c/w note: when surface mounted to an fr4 board using 1 pad size, 1 oz.(cu. area 1.127 sq in ).
utf3055 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-318.d ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain source breakdown voltage (note 1) v gs = 0v, i d =250a 60 68 v temperature coefficient (positive) bv dss 66 mv/c drain-source leakage current i dss v gs =0v, v ds =60v 1.0 a gate-source leakage current i gss v gs = 20 v, v ds =0v 100 na on characteristics (note 1) gate threshold voltage v gs =v ds , i d =250a 2.0 3.0 4.0 v temperature coefficient (negative) v gs(th) 6.6 mv/c static drain-source on-state resistance r ds(on) v gs =10 v, i d =1.5a 88 110 m ? static drain-to-source on-resistance v ds(on) v gs =10 v, i d =3a 0.27 0.40 v forward tran conductance g fs v ds =8.0v, i d =1.7a 3.2 m dynamic parameters input capacitance c iss 324 455 pf output capacitance c oss 35 50 pf reverse transfer capacitance c rss v gs =0 v, v ds =25 v, f=1.0mhz 110 155 pf switching parameters (note 2) turn-on delay time t d(on) 9.4 20 ns turn-on rise time t r 14 30 ns turn-off delay time t d(off) 21 45 ns turn-off fall-time t f v gs =10v, v dd =30v, i d =3.0a , r g =9.1 ? (note 1) 13 30 ns total gate charge q g 10.6 22 nc gate-source charge q gs 1.9 nc gate-drain charge q gd v gs =10v, v ds =48v, i d =3.0a (note 1) 4.2 nc diode forward voltage v sd v gs =0v, i s =3.0a 0.89 1.0 v t rr 30 ns t a 22 ns body diode reverse recovery time t b 8.6 ns body diode reverse recovery charge q rr v gs =0v, i s =3.0a, di/dt=100 a/ s (note 1) 0.04 nc note: 1. pulse test: pulse width 300 s, duty cycle 2.0%. 2. switching characteristics are indepe ndent of operating junction temperatures.
utf3055 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-318.d ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0.5 0 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 1.5 2.0 3.0 1.0 2.5 0 50 100 150 200 250 300 020 60 80100 40 0 50 100 150 200 250 300 drain current, i d (a) drain current, i d (a)
utf3055 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-318.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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